Formation of InAs/InGaAsP quantum-dashes on InP(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3265733
Reference21 articles.
1. InP based lasers and optical amplifiers with wire-/dot-like active regions
2. Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers
3. Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique
4. Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm
5. Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction
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1. Semiconductor quantum dot lasers: Genesis, prospects, and challenges;Quantum Photonics;2024
2. Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications;physica status solidi (RRL) – Rapid Research Letters;2023-09-26
3. Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications;Journal of Physics D: Applied Physics;2023-04-27
4. Indium arsenide single quantum dash morphology and composition for wavelength tuning in quantum dash lasers;Applied Physics Letters;2023-01-30
5. Height distributions of uncapped InAs/InGaAsP/InP quantum dashes and their effect on emission wavelengths;Photonic and Phononic Properties of Engineered Nanostructures XII;2022-03-05
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