Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm-Reference-Cited by-同舟云学术

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Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm

Published:2006-12-11 Issue:24 Volume:89 Page:241123
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moreau G.,Azouigui S.,Cong D.-Y.,Merghem K.,Martinez A.,Patriarche G.,Ramdane A.,Lelarge F.,Rousseau B.,Dagens B.,Poingt F.,Accard A.,Pommereau F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2408631

Reference21 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Gain and the threshold of three-dimensional quantum-box lasers

3. InGaAs-GaAs quantum-dot lasers

4. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

5. Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed

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