Two-state lasing at room temperature in InAs/InP quantum dots
Author:
Affiliation:
1. iPhotonics Laboratories, Department of Electrical and Computer Engineering, Concordia University, Montreal, QC H3G1M8, Canada
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5110316
Reference47 articles.
1. Simultaneous two-state lasing in quantum-dot lasers
2. The developments of InP-based quantum dot lasers
3. Cavity length and stripe width dependent lasing characteristics of InAs/InP(1 0 0) quantum dot lasers
4. Enhanced Dynamic Performance of Quantum Dot Semiconductor Lasers Operating on the Excited State
5. Observation of zero linewidth enhancement factor at excited state band in quantum dot laser
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1. Modeling Electronic and Optical Properties of InAs/InP Quantum Dots;Photonics;2024-08-10
2. Reflection sensitivity of dual-state quantum dot lasers;Photonics Research;2023-09-27
3. Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2022-01
4. Effect of oxygen and polymer matrix on photo-induced changes in CdSe quantum dots;Materials Chemistry and Physics;2020-12
5. Optical Noise of Dual-State Lasing Quantum Dot Lasers;IEEE Journal of Quantum Electronics;2020-12
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