Observation of zero linewidth enhancement factor at excited state band in quantum dot laser
Author:
Affiliation:
1. St. Petersburg Academic UniversitySt. Petersburg194021Russia
2. Ioffe Physical‐Technical Institute of RASSt. Petersburg194021Russia
3. Innolume GmbHDortmund44263Germany
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.2512
Reference6 articles.
1. Quantum dot laser;Ledentsov N.N.;Semicond. Sci. Technol.,2011
2. Comparison of dynamic properties of ground‐ and excited‐state emission in p‐doped InAs/GaAs quantum‐dot lasers;Arsenijević D.;Appl. Phys. Lett.,2014
3. Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state;Wang C.;IEEE J. Quantum Electron.,2014
4. Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers
5. Measurement of linewidth enhancement factor for 1.3‐μm InAs/GaAs quantum dot lasers;Xiao J.‐L.;IEEE Photonics Technol. Lett.,2013
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