Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction-Reference-Cited by-同舟云学术

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Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction

Published:2004-05-05 Issue:18 Volume:92 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Létoublon A.,Favre-Nicolin V.,Renevier H.,Proietti M. G.,Monat C.,Gendry M.,Marty O.,Priester C.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.92.186101/fulltext

Reference12 articles.

1. Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures

2. Grazing-incidence diffraction anomalous fine structure of InAs/InP(001) self-assembled quantum wires

3. Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering

4. Direct Determination of Strain and Composition Profiles in SiGe Islands by Anomalous X-Ray Diffraction at High Momentum Transfer

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