Instability measurements in amorphous hydrogenated silicon using capacitance-voltage techniques
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1928315
Reference7 articles.
1. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors
2. Metastable Defects in Amorphous-Silicon Thin-Film Transistors
3. Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors
4. The Kinetics of Removal of Defects in a-Si:H TFTs Made with PECVD Oxide Gate Insulator Material
5. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
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