Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme-Reference-Cited by-同舟云学术

Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme

Published:2013-06-21 Issue:23 Volume:113 Page:234101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vasić Relja,Consiglio Steven,Clark Robert D.,Tapily Kandabara,Sallis Shawn,Chen Bo,Newby David,Medikonda Manasa,Raja Muthinti Gangadhara,Bersch Eric,Jordan-Sweet Jean,Lavoie Christian,Leusink Gert J.,Diebold Alain C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4811446

Reference68 articles.

1. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

2. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

3. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide

4. Structural and dielectric properties of amorphousZrO2andHfO2

5. Phonons and lattice dielectric properties of zirconia

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