Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4941102
Reference30 articles.
1. InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays
2. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
3. Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity
4. Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells
5. Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition
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1. Evolution of the atomic and electronic structures during nitridation of the Si(1 1 1) surface under ammonia flux;Applied Surface Science;2022-01
2. Microscopic mechanisms of Si(111) surface nitridation and energetics of Si3N4/Si(111) interface;Applied Surface Science;2019-07
3. Formation of a Graphene-Like SiN Layer on the Surface Si(111);Semiconductors;2018-11-07
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