Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells-Reference-Cited by-同舟云学术

Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells

Published:2008-09-15 Issue:6 Volume:104 Page:063114
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cen L. B.,Shen B.,Qin Z. X.,Zhang G. Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2980320

Reference17 articles.

1. Intersubband absorption at λ∼1.3 μm in optimized GaN/AlGaN Bragg-confined structures

2. Optimal design of gan-algan bragg-confined structures for intersubband absorption in the near-infrared spectral range

3. Quantum well shape optimization of continuously gradedAlxGa1−xNstructures by combined supersymmetric and coordinate transform methods

4. Probing ultrafast carrier and phonon dynamics in semiconductors

5. Electron–LO-phonon scattering rates in semiconductor quantum wells

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