Intersubband absorption in strained AlxGa1−xN/GaN quantum wells with InyGa1−yN nanogroove layers
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
1. Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths
2. Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells
3. Intersubband absorption in modulation doped heterostructures
4. Intersubband transitions in an asymmetric double quantum well
5. The effects of intense laser field and electric field on intersubband absorption in a double-graded quantum well
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