Intersubband absorption at λ∼1.3 μm in optimized GaN/AlGaN Bragg-confined structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1522743
Reference23 articles.
1. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
2. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
3. Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells
4. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells
5. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
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