Effect of Microstructure on the Electromigration Life of Thin‐Film A1–Cu Conductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661346
Reference8 articles.
1. Electromigration Damage in Aluminum Film Conductors
2. Electromigration in Thin Al Films
3. Surface topology changes during electromigration in metallic thin film stripes
4. The effect of copper additions on electromigration in aluminum thin films
5. STUDY OF FAILURE MECHANISMS IN Al–Cu THIN FILMS BY HIGH‐VOLTAGE ELECTRON MICROSCOPY
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1. Electromigration in ULSI interconnects;Materials Science and Engineering: R: Reports;2007-10
2. Grain structure and crystallographic orientation in Cu damascene lines;Microelectronic Engineering;2004-02
3. A physically based model of electromigration and stress-induced void formation in microelectronic interconnects;Journal of Applied Physics;1999-08-15
4. A study on the crystallographic orientation with residual stress and electrical property of Al films deposited by sputtering;Thin Solid Films;1998-06
5. Electromigration in integrated circuits;Critical Reviews in Solid State and Materials Sciences;1997-09
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