Enhanced internal quantum efficiency and light extraction efficiency from textured GaN∕AlGaN quantum wells grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2179120
Reference14 articles.
1. The Blue Laser Diode
2. Ultraviolet electroabsorption modulator based on AlGaN∕GaN multiple quantum wells
3. Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption
4. Spontaneous polarization and piezoelectric constants of III-V nitrides
5. Comparative study of GaN/AlGaN MQWs grown homoepitaxially on and (0001) GaN
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1. Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer;IEEE Photonics Journal;2016-10
2. Formation properties of an InGaN active layer for high-efficiency InGaN/GaN multi-quantum-well-nanowire light-emitting diodes;Journal of the Korean Physical Society;2016-09
3. Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy;MRS Communications;2016-08-15
4. Effect of defects in oxide templates on Non-catalytic growth of GaN nanowires for high-efficiency light-emitting diodes;Journal of the Korean Physical Society;2016-04
5. Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer;IEEE Photonics Technology Letters;2014-06
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