Ohmic contacts ton-GaN using PtIn2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119277
Reference15 articles.
1. Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
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1. Structural Phase Transitions in PtIn2 at High Pressure: A Theoretical Investigation;Inorganic Chemistry;2017-11-16
2. Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN;Journal of Electronic Materials;2006-11
3. Optimization of Growth and Activation of Highly Doped p-type GaN for Tunnel Junctions;MRS Proceedings;2004
4. Optical and electrical properties of TiN/n-GaN contacts in correlation with their structural properties;Semiconductor Science and Technology;2003-05-13
5. Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact ton-GaN;Journal of Applied Physics;2002-06
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