Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact ton-GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1471390
Reference26 articles.
1. Progress and prospects of group-III nitride semiconductors
2. III–nitrides: Growth, characterization, and properties
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4. Ultra-low resistive ohmic contacts on n-GaN using Si implantation
5. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN
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