Physical and electrical investigation of ohmic contacts to AlGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357908
Reference31 articles.
1. Microstructural characterization of AlGaAs‐GaAs modulation‐doped field‐effect transistor ohmic contacts formed by transient annealing
2. Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contacts
3. Models for contacts to planar devices
4. Messung des übergangswiderstandes zwischen metall und diffusionsschicht in Si-planarelementen
5. Contact resistance to high-mobility AlGaAs/GaAs heterostructures
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2. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure;The European Physical Journal Applied Physics;2020-02
3. Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures;Russian Microelectronics;2017-07
4. Towards low-dimensional hole systems in Be-doped GaAs nanowires;Nanotechnology;2017-03-01
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