Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon-Reference-Cited by-同舟云学术

Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon

Published:2012-12-03 Issue:23 Volume:101 Page:232107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Meirer Florian,Giubertoni Damiano,Demenev Evgeny,Vanzetti Lia,Gennaro Salvatore,Fedrizzi Michele,Pepponi Giancarlo,Mehta Apurva,Pianetta Piero,Steinhauser Georg,Vishwanath Vinayak,Foad Majeed,Bersani Massimo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4769446

Reference23 articles.

1. Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

2. Conformal Doping of FINFETs: a Fabrication and Metrology Challenge

3. Plasma doping of silicon fin structures

4. Depth-Resolved Composition and Chemistry of Ultra-Thin Films by Angle-Resolved X-Ray Photoelectron Spectroscopy

5. Plasma doping for the fabrication of ultra-shallow junctions

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