n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers

Author:

Ferre R.,Martín I.,Ortega P.,Vetter M.,Torres I.,Alcubilla R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference28 articles.

1. D. Macdonald and A. Cuevas, Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow, 1–5 May 2000 (James and James, London, 2000), p. 1707.

2. SHORT COMMUNICATION: ACCELERATED PUBLICATION: Multicrystalline silicon solar cells exceeding 20% efficiency

3. O. Schultz, S. W. Glunz, J. C. Goldschmidt, H. Lautenschlager, A. Leimenstoll, E. Schneiderlöchner, and G. P. Willeke, Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, 7–11 June 2004 (WIP, Munich/ETA, Florence, 2004), p. 604.

4. Investigation of various surface passivation schemes for silicon solar cells

5. Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

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