Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3273492
Reference43 articles.
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3. GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium;Ng G. I.,2005
4. Uncooled (25–85°C) 10 Gbit/s operation of 1.3 [micro sign]m-range metamorphic Fabry-Perot laser on GaAs substrate
5. High-Temperature Operation of 1.26-$\mu$m Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate
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