Comprehensive numerical modeling of filamentary RRAM devices including voltage ramp-rate and cycle-to-cycle variations
Author:
Affiliation:
1. Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, USA
Funder
Semiconductor Research Corporation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5042789
Reference37 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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3. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
4. Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
5. HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
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