Reaction between SiC and W, Mo, and Ta at elevated temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346457
Reference23 articles.
1. Temperature dependence of the current‐voltage characteristics of metal‐semiconductor field‐effect transistors inn‐type β‐SiC grown via chemical vapor deposition
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3. Improved β‐SiC heteroepitaxial films using off‐axis Si substrates
4. Auger and electron energy‐loss study of the Al/SiC interface
5. Photoemission spectroscopy study of the Al/SiC interface
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