Improved β‐SiC heteroepitaxial films using off‐axis Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98824
Reference14 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
3. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
4. Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition
5. Interface structures in beta‐silicon carbide thin films
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