Impact of Inversion Domain Boundaries on the Electronic Properties of 3C‐SiC-Reference-Cited by-同舟云学术

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Impact of Inversion Domain Boundaries on the Electronic Properties of 3C‐SiC

Published:2022-06-16 Issue:9 Volume:259 Page:2200093
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Scalise Emilio¹^ORCID,Zimbone Massimo²,Marzegalli Anna³

Affiliation:

1. Department of Materials Science Università degli Studi di Milano-Bicocca via R. Cozzi 55 I-20125 Milano Italy

2. IMM-CNR V. S. Sofia 24 I-95128 Catania Italy

3. L-NESS and Department of Physics Politecnico di Milano via Anzani 42 I-22100 Como Italy

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200093

Reference19 articles.

1. Electronic-structure study of the (110) inversion domain boundary in SiC

2. The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

3. Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

4. New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of β-SiC Synthesis Technology on Silicon Substrate;Technologies;2023-10-27

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