Improvement of the electrical performance in metal-induced laterally crystallized polycrystalline silicon thin-film transistors by crystal filtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2400108
Reference7 articles.
1. Crystallization of LPCVD Silicon Films by Low Temperature Annealing
2. A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films
3. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization
4. Gate current and oxide reliability in p/sup +/ poly MOS capacitors with poly-Si and poly-Ge/sub 0.3/Si/sub 0.7/ gate material
5. The Effects of Crystal Filtering on Growth of Silicon Grains in Metal-Induced Lateral Crystallization
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1. Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices;IEEE Electron Device Letters;2024-09
2. Effect of Ultrathin Silicon Oxide Film for Enhanced Performance and Reliability of Metal-Induced Laterally Crystallized Thin-Film Transistors Using Silicon Nitride as a Gate Dielectric;ECS Journal of Solid State Science and Technology;2016
3. Polycrystalline silicon multi-functional memory (MFM) with a recessed channel structure;Journal of the Korean Physical Society;2013-09
4. Effect of Ni silicide density on electrical performance of silicide-induced crystallized polycrystalline silicon thin-film transistors;Electronic Materials Letters;2012-08
5. High performance low temperature polycrystalline Si thin-film transistors fabricated by silicide seed-induced lateral crystallization;Electronic Materials Letters;2012-06
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