The Effects of Crystal Filtering on Growth of Silicon Grains in Metal-Induced Lateral Crystallization-Reference-Cited by-同舟云学术

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The Effects of Crystal Filtering on Growth of Silicon Grains in Metal-Induced Lateral Crystallization

Published:2006-02-01 Issue:2 Volume:9 Page:G56-G58
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochemical and Solid-State Letters

Author:

Kim M.-S.,Lee J.-S.,Kim Y.-S.,Joo S.-K.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference8 articles.

1. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

2. A study on the leakage current of poly-Si TFTs fabricated by metal induced lateral crystallization

3. Investigation of the low field leakage current mechanism in polysilicon TFT's

4. Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films

5. Orientation filtering by growth‐velocity competition in zone‐melting recrystallization of silicon on SiO2

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices;IEEE Electron Device Letters;2024-09

2. Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization;Nanomaterials;2021-07-22

3. Asymmetric Low Metal Contamination Ni-Induced Lateral Crystallization Polycrystalline-Silicon Thin-Film Transistors With Low OFF-State Currents for Back-End of Line (BEOL) Compatible Devices Applications;IEEE Journal of the Electron Devices Society;2020

4. Channel Width Splitting Effect on Driving Characteristics of Silicide Seed-Induced Laterally Crystallized Poly-Si Thin-Film Transistors;IEEE Transactions on Electron Devices;2013-04

5. Impact of Rapid Crystallization of Si Using Nickel-Metal-Induced Lateral Crystallization on Thin-Film Transistor Characteristics;Japanese Journal of Applied Physics;2012-02-20

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