Investigation of the low field leakage current mechanism in polysilicon TFT's-Reference-Cited by-同舟云学术

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Investigation of the low field leakage current mechanism in polysilicon TFT's

Published:1998 Issue:1 Volume:45 Page:213-217
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lui O.K.B.,Quinn M.J.,Tam S.W.-B.,Brown T.M.,Migliorato P.,Ohshima H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/14354/00658833.pdf?arnumber=658833

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Leakage Current Reduction Using 350-nm Ultra-Violet Irradiation in P-Channel Polycrystalline-Silicon Thin-Film Transistors;IEEE Transactions on Device and Materials Reliability;2015-03

2. Simulation and Investigation of Random Grain-Boundary-Induced Variabilities for Stackable NAND Flash Using 3-D Voronoi Grain Patterns;IEEE Transactions on Electron Devices;2014-04

3. Schottky Barrier Controlled Conduction in Poly-Si TFTs With Metal Source and Drain;IEEE Transactions on Electron Devices;2013-06

4. Electrical Stress Effect on the Leakage Current of Metal-Induced Laterally Crystallized p-Channel Poly-Si TFTs;Journal of Nanoscience and Nanotechnology;2012-04-01

5. Two dimensional simulation and modeling of the electrical behavior in nanocrystalline silicon thin-film transistors;Journal of Applied Physics;2008-05-15

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