Gate current and oxide reliability in p/sup +/ poly MOS capacitors with poly-Si and poly-Ge/sub 0.3/Si/sub 0.7/ gate material-Reference-Cited by-同舟云学术

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Gate current and oxide reliability in p/sup +/ poly MOS capacitors with poly-Si and poly-Ge/sub 0.3/Si/sub 0.7/ gate material

Published:1998-07 Issue:7 Volume:19 Page:213-215
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Salm C.,Klootwijk J.H.,Ponomarev Y.,Boos P.W.M.,Gravesteijn D.J.,Woerlee P.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/55/15090/00701420.pdf?arnumber=701420

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3. Improvement of the electrical performance in metal-induced laterally crystallized polycrystalline silicon thin-film transistors by crystal filtering;Applied Physics Letters;2006-12-04

4. La2O3/Si0.3Ge0.7 p-MOSFETs with high hole mobility and good device characteristics;IEEE Electron Device Letters;2002-12

5. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits;Journal of Applied Physics;2001-09

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