Growth of InAsxP1−x/InP multi‐quantum well structures by solid source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360026
Reference21 articles.
1. Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP
2. InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers
3. Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells
4. Very low threshold current 1.3μm InAsyP1−y/InP BH strained-layer quantum well laser diodes grown by MOCVD
5. Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
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1. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition;Nanoscale Research Letters;2016-04-19
2. Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique;Japanese Journal of Applied Physics;2009-04-20
3. InAs1-xPx Nanowires for Device Engineering;Nano Letters;2006-02-11
4. Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells;Journal of Applied Physics;2003-09
5. Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs;Journal of Crystal Growth;2003-08
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