Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
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3. Ga0.28In0.72As/Al0.28In0.72As 2 μm photodiode heterostructures prepared by atmospheric pressure MOCVD
4. Ga1−yInyAs/InAsxP1−x (y > 0.53, x > 0) pin photodiodes for long wavelength regions (λ > 2μm) grown by hydride vapour phase epitaxy
5. 2.6 μm InGaAs photodiodes
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