Experiments and analysis of the two-step growth of InGaAs on GaAs substrate-Reference-Cited by-同舟云学术

Experiments and analysis of the two-step growth of InGaAs on GaAs substrate

Published:2015 Issue:30 Volume:17 Page:5808-5813
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Jinping¹²³⁴⁵,Miao Guoqing¹²³⁴,Zhang Zhiwei¹²³⁴,Zeng Yugang¹²³⁴

Affiliation:

1. State Key Laboratory of Luminescence Applications

2. Changchun Institute of Optics, Fine Mechanics and Physics

3. Chinese Academy of Sciences

4. Changchun, China

5. University of Chinese Academy of Sciences

Abstract

In this highlight, a mechanism has been proposed to explain the dislocation density reduction in the epitaxial layer by a LT-buffer.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CE/C5CE00979K

Reference26 articles.

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2. Dark current characteristics of GaAs-based 2.6 µm InGaAs photodetectors on different types of InAlAs buffer layers

3. Ultralow leakage In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector grown on linearly graded metamorphic In/sub x/Ga/sub 1-x/P buffered GaAs substrate

4. Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications

5. Ga0.28In0.72As/Al0.28In0.72As 2 μm photodiode heterostructures prepared by atmospheric pressure MOCVD

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