Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2714315
Reference18 articles.
1. Electromigration in On-Chip Single/Dual Damascene Cu Interconnections
2. Copper Metallization for High Performance Silicon Technology
3. Electromigration in Cu interconnects with very different grain structures
4. Electromigration-Induced Void Growth Kinetics in SiNx-Passivated Single-Damascene Cu Lines
5. Electromigration path in Cu thin-film lines
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