Void dynamics in copper-based interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3611408
Reference38 articles.
1. Stress evolution due to electromigration in confined metal lines
2. In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures
3. Effect of mass transport along interfaces and grain boundaries on copper interconnect degradation
4. Effects of microstructure on the formation, shape, and motion of voids during electromigration in passivated copper interconnects
5. Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization
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1. Analytical Post-Voiding Modeling and Efficient Characterization of EM Failure Effects Under Time-Dependent Current Stressing;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-12
2. Impact of Plasma Activation on Copper Surface Layer for Low Temperature Hybrid Bonding;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05
3. Fast Electromigration Simulation for Chip Power Grids;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05
4. The effect of orientation and pore size on nano mechanical behaviour of Ag thin films: a comparison between experiment and atomistic simulation;Philosophical Magazine;2022-07-16
5. Mechanism investigation of pre-existing void-induced multi-modal electro-migration behavior;Journal of Semiconductors;2022-05-01
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