Investigation of the electronic properties of nitrogen vacancies in AlGaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3089239
Reference13 articles.
1. GaN: Processing, defects, and devices
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. AlGaN/GaN heterojunction bipolar transistor
4. High quantum efficiency AlGaN solar-blind p-i-n photodiodes
5. AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA
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2. Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma;Coatings;2021-02-25
3. Theoretical investigation of the charges weight between interface and the oxygen traps in barrier layer on the 2DEG density of $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 /AlGaN/GaN HEMTs;Journal of Computational Electronics;2018-05-14
4. Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire;Optical Materials;2017-04
5. Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers;Current Applied Physics;2016-06
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