Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers-Reference-Cited by-同舟云学术

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Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers

Published:2016-06 Issue:6 Volume:16 Page:633-637
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Podlipskas Žydrūnas,Aleksiejūnas Ramūnas,Nargelas Saulius,Jurkevičius Jonas,Mickevičius Jūras,Kadys Arūnas,Tamulaitis Gintautas,Shur Michael S.,Shatalov Max,Yang Jinwei,Gaska Remis

Funder

European Social Fund

US Army Cooperative Research

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference29 articles.

1. The optical signature of electron injection in p-(Al)GaN

2. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

3. Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1−xN

4. Recombination-Enhanced Reactions in Semiconductors

5. Recombination enhanced defect reactions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of carriers diffusion length and mobility in annealed GaAsPN materials for intermediate band solar cells;Solar Energy Materials and Solar Cells;2020-09

2. Performance degradation of Si device with the change of carrier lifetime under laser irradiation;SPIE Proceedings;2017-05-12

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