Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕AlGaAs∕GaAs laser diode-Reference-Cited by-同舟云学术

Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕AlGaAs∕GaAs laser diode

Published:2007-01-15 Issue:2 Volume:101 Page:024504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ankudinov A. V.,Evtikhiev V. P.,Ladutenko K. S.,Rastegaeva M. G.,Titkov A. N.,Laiho R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2426175

Reference22 articles.

1. Atomic Resolution with Atomic Force Microscope

2. Cross-sectional lateral-force microscopy of semiconductor heterostructures and multiple quantum wells

3. Discrimination of Compound Semiconductor Heterointerfaces by Simultaneous Observations of Atomic Force Microscopy and Lateral Force Microscopy

4. Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

5. Quantitative two-dimensional carrier profiling of a 400 nm complementary metal–oxide–semiconductor device by Schottky scanning capacitance microscopy

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