Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829707
Reference27 articles.
1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
2. Recombination-Induced Stacking Faults: Evidence for a General Mechanism in Hexagonal SiC
3. SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
4. Dislocation conversion in 4H silicon carbide epitaxy
5. Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles
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1. Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process;Journal of Electronic Materials;2023-04-27
2. Novel Photonic Applications of Silicon Carbide;Materials;2023-01-22
3. Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates;Wide Bandgap Semiconductors for Power Electronics;2021-10-29
4. Rocking Curve Imaging Investigation of the Long-Range Distortion Field between Parallel Dislocations with Opposite Burgers Vectors;Applied Sciences;2021-09-28
5. Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes;Journal of Electronic Materials;2021-09-13
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