Optically enhanced trap assisted hysteretic I-V characteristics of nanocrystalline silicon based p-i-n heterostructure-Reference-Cited by-同舟云学术

Optically enhanced trap assisted hysteretic I-V characteristics of nanocrystalline silicon based p-i-n heterostructure

Published:2020-02-24 Issue:8 Volume:127 Page:085708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chakrabarty Sudipta¹,Das Gourab²,Ray Mallar³^ORCID,Hossain Syed Minhaz¹^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah 711103, West Bengal, India

2. Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah 711103, West Bengal, India

3. School of Engineering and Sciences, Tecnológico de Monterrey, Av. Eugenio Garza Sada 2501 Sur, Tecnológico, 64849 Monterrey, Nuevo Leon, Mexico

Funder

Department of Science and Technology, Government of India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5127653

Reference68 articles.

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4. Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

5. Recent Technology Advances of Emerging Memories

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