Metal–semiconductor junction in silicon nanostructures: role of interface traps
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s00339-024-07451-5.pdf
Reference57 articles.
1. B. G. Streetman and S. K. Banerjee, Solid state electronic devices, Seventh. Edinburgh Gate: Pearson Education Limited, 2016.
2. R. Tsu, Phenomena in silicon nanostructure devices. Appl. Phys. A Mater. Sci. Process. 402, 391–402 (2000). https://doi.org/10.1007/s003390000552
3. R. Rahighi, O. Akhavan, A.S. Zeraati, S.M. Sattari-esfahlan, All-carbon negative differential resistance nanodevice using a single flake of nanoporous graphene. ACS Appl. Electron. Mater. 3(8), 3418–3427 (2021). https://doi.org/10.1021/acsaelm.1c00396
4. B.J. Pawlak, T. Gregorkiewicz, C.A.J. Ammerlaan, Experimental investigation of band structure modification in silicon nanocrystals. Phys. Rev. B 64(115308), 1–9 (2001). https://doi.org/10.1103/PhysRevB.64.115308
5. S. Chakrabarty, G. Das, M. Ray, S.M. Hossain, Optically enhanced trap assisted hysteretic I–V characteristics of nanocrystalline silicon based p-i-n heterostructure. J. Appl. Phys. (2020). https://doi.org/10.1063/1.5127653
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