Nonpolar GaN substrates grown by ammonothermal method-Reference-Cited by-同舟云学术

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Nonpolar GaN substrates grown by ammonothermal method

Published:2009-09-28 Issue:13 Volume:95 Page:131119
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kucharski R.,Rudziński M.,Zając M.,Doradziński R.,Garczyński J.,Sierzputowski L.,Kudrawiec R.,Serafińczuk J.,Strupiński W.,Dwiliński R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3227893

Reference20 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Nonpolar m-plane thin film GaN and InGaN∕GaN light-emitting diodes on LiAlO2(100) substrates

3. Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

4. Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

5. Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN

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1. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12

2. Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE;Materials Science in Semiconductor Processing;2023-11

3. Three-dimensional curving of crystal planes in wide bandgap semiconductor wafers visualized using a laboratory X-ray diffractometer;Journal of Crystal Growth;2022-04

4. Non-polar GaN/AlGaN quantum-well polariton laser at room temperature;Physical Review B;2021-09-24

5. Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy;Crystal Growth & Design;2021-08-18

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