Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN-Reference-Cited by-同舟云学术

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Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN

Published:2009-04-03 Issue: Volume:2 Page:041002
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Fischer Alec M.,Wu Zhihao,Sun Kewei,Wei Qiyuan,Huang Yu,Senda Ryota,Iida Daisuke,Iwaya Motoaki,Amano Hiroshi,Ponce Fernando A.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=4/a=041002/pdf

Reference21 articles.

1. Microstructure and electronic properties of InGaN alloys

2. Spontaneous polarization and piezoelectric constants of III-V nitrides

3. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

4. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

5. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

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4. Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions;physica status solidi (b);2022-02-23

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