InGaP/GaAs superlattices grown by gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102050
Reference9 articles.
1. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
2. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
3. High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition
4. Growth of InGaP on GaAs using gas-source molecular-beam epitaxy
5. High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
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1. A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources;Progress in Crystal Growth and Characterization of Materials;2000-01
2. X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs;Journal of Applied Physics;1998-08-15
3. Interface quality and electron transfer at the GaInP on GaAs heterojunction;Journal of Applied Physics;1998-07-15
4. XPS study of GaInP on GaAs interface;Applied Surface Science;1998-01
5. As Surface Segregation during the Growth of GaInP on GaAs;Japanese Journal of Applied Physics;1997-11-15
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