X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368357
Reference52 articles.
1. Heterojunction band discontinuities: A fundamental problem in solid-state science
2. How does the chemical nature of the interface modify the band offset?
3. Heterojunction band offset: A local feature
4. Band discontinuities inInxGa1−xAs-InP and InP-AlyIn1−yAs heterostructures:Evidence of noncommutativity
5. As/P interdiffusion in ultrathin InAs/InP strained quantum wells
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