Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1−ySny (y = 0.06%) grown on n-Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4754625
Reference31 articles.
1. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
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3. Ge-on-Si laser operating at room temperature
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5. Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands
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2. Lateral photoconductivity of GeSn alloys;Physics and Simulation of Optoelectronic Devices XXIX;2021-03-05
3. Radiation-induced electron and hole traps in Ge1 − xSnx (x = 0–0.094);Journal of Applied Physics;2020-02-14
4. Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films;Journal of Physics: Condensed Matter;2020-02-10
5. Enhanced optical and electrical performance of Ge1−x Sn x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments;Semiconductor Science and Technology;2019-03-20
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