Improved characterization of the Si‐SiO2interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91394
Reference5 articles.
1. Interface states on semiconductor/insulator surfaces
2. LaF3insulators for MIS structures
3. Photocapacitive MIS infrared detectors
4. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
5. Valence-band structures of III-V compounds and alloys—Bond-orbital and coherent-potential approximations
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1. Polygon-based large diameter measurement with modular gauges;Measurement;2000-01
2. Saturation of ac Surface Photovoltages due to Photocapacitances in a Strongly-Inverted Oxidized p-Type Silicon Wafer;Japanese Journal of Applied Physics;1987-04-20
3. Space-Charge Layers at Semiconductor Interfaces;Crystalline Semiconducting Materials and Devices;1986
4. Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers*;Japanese Journal of Applied Physics;1984-11-20
5. Techniques for improving the Si–SiO2interface characterization;Journal of Applied Physics;1983-09
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