Low temperature photoluminescence study in AlxGa1−xAs alloys in the indirect band gap region (x≳0.4)-Reference-Cited by-同舟云学术

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Low temperature photoluminescence study in AlxGa1−xAs alloys in the indirect band gap region (x≳0.4)

Published:1995-10-15 Issue:8 Volume:78 Page:5090-5097
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Torres‐Delgado G.,Castanedo‐Perez R.,Diaz‐Arencibia P.,Mendoza‐Alvarez J. G.,Orozco‐Vilchis J. L.,Murillo‐Lara M.,Serra‐Jones A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359740

Reference11 articles.

1. Photoluminescence of AlxGa1−xAs alloys

2. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

3. Some optical properties of the AlxGa1−xAs alloys system

4. Low‐temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxy

5. Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement ofx

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A first-principles study of structural and electronic properties of Ga1−xAlxAs alloys;Solid State Communications;2001-05

2. Photoacoustic study of the effect of aluminum content on the thermal and thermomechanical properties of AlyGa1−yAs on GaAs in the range (0⩽y≲1);Journal of Applied Physics;2000-06

3. Band-gap shift in heavily dopedn-typeAl0.3Ga0.7Asalloys;Physical Review B;1999-07-15

4. Growth and optical characterization of indirect-gap AlxGa1−xAs alloys;Journal of Applied Physics;1999-07

5. Photo-induced electron trapping in indirect bandgap at low temperature;Journal of Physics: Condensed Matter;1999-01-01

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