Electrical properties of boron-doped p–SiGeC grown on n−–Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1290047
Reference11 articles.
1. Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors
2. Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1−xGex double barrier structures
3. High hole mobility in SiGe alloys for device applications
4. The effect of carbon on the valence band offset of compressively strained Si1−x−yGexCy/(100) Si heterojunctions
5. The Electrical Conductivity and Hall Effect of Silicon
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1. Enhanced optical and electrical performance of Ge1−x Sn x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments;Semiconductor Science and Technology;2019-03-20
2. Electrical characterization studies of p-type Ge, Ge1−ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates;Current Applied Physics;2014-03
3. Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1−ySny (y = 0.06%) grown on n-Si substrate;Applied Physics Letters;2012-09-24
4. Research on reverse recovery characteristics of SiGeC p-i-n diodes;Chinese Physics B;2008-12
5. Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation;Chinese Physics Letters;2008-05-29
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