Resolution and contrast in near-field photocurrent imaging of defects on semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365769
Reference20 articles.
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5. Contrast and resolution of SEM charge‐collection images of dislocations
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1. Two-dimensional dopant profiling of silicon with submicron resolution using near field optics on silicon/electrolyte contacts;Applied Surface Science;2008-02
2. Pyramid-shaped silicon photodetector with subwavelength aperture [for NSOM];IEEE Transactions on Electron Devices;2002-06
3. Submicron nickel deposition on silicon from an electrolytic solution controlled by near-field optics;Journal of Applied Physics;2001-11
4. Near-field scanning optical microscopy studies of electronic and photonic materials and devices;Materials Science and Engineering: R: Reports;2001-05
5. Effect of Anisotropic Strain on the Crosshatch Electrical Activity in Relaxed GeSi Films;Physical Review Letters;2001-04-16
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