Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1638878
Reference12 articles.
1. Trapping effects in GaN and SiC microwave FETs
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
4. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
5. Effect of surface passivation of AlGaN∕GaN heterostructure field-effect transistor
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