Effect of surface passivation of AlGaN∕GaN heterostructure field-effect transistor
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020270?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors
2. The analysis of exponential and nonexponential transients in deep‐level transient spectroscopy
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
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