Nitrogen effect on self-interstitial generation in Czochralski silicon revealed by gold diffusion experiments
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1401795
Reference13 articles.
1. Temperature dependence of dislocation efficiency as sinks for self‐interstitials in silicon as measured by gold diffusion
2. Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
3. Phosphorus diffusion effect on defect structure of silicon with oxygen precipitates revealed by gold diffusion study
4. Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
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3. Experimental studies of thermo‐mechanical treatment on conventionally melted high nitrogen martensitic stainless steel;Anti-Corrosion Methods and Materials;2008-03-21
4. The effect of thermal treatments on the magnetic susceptibility of Czochralski-grown n-Si monocrystals;physica status solidi (a);2008-02
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